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| smd type transistors 1 emitter 2 base 3 collector BF820W features low current (max. 50 ma) high voltage (max. 300 v). absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage (open emitter) v cbo 300 v collector-emitter voltage (open base) v ceo 300 v emitter-base voltage (open collector) v ebo 5v collector current i c 50 ma peak collector current i cm 100 ma peak base current i bm 50 ma total power dissipation * t amb 25 p tot 200 mw storage temperature t stg -65to+150 junction temperature t j 150 operating ambient temperature r amb -65to+150 thermal resistance from junction to ambient * r th j-a 625 k/w * transistor mounted on an fr4 printed-circuit board. electrical characteristics ta = 25 parameter symbol testconditons min typ max unit i e =0;v cb = 200 v 10 na i e =0;v cb = 200 v; tj = 150 10 a emitter cutoff current i ebo i c =0;v eb =5v 50 na dc current gain h fe i c =25ma;v ce =20v 50 collector-emitter saturation voltage * v cesat i c =30ma;i b = 5 ma 600 mv feedback capacitance c re i c =0;v cb =30v;f=1mhz 1.6 pf transition frequency f t i c =10ma;v ce = 10 v; f=100mhz 60 mhz * pulse test: tp 300 s; ? 0.02. collector cutoff current i cbo marking marking 1v sales@twtysemi.com 1of 1 http://www.twtysemi.com smd type transistors smd type transistors product specification 4008-318-123
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